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BAT54XY

nexperia
Part Number BAT54XY
Manufacturer nexperia
Description Schottky barrier quadruple diode
Published Apr 12, 2019
Detailed Description BAT54XY Schottky barrier quadruple diode 12 February 2019 Product data sheet 1. General description Schottky barrier q...
Datasheet PDF File BAT54XY PDF File

BAT54XY
BAT54XY

Overview
BAT54XY Schottky barrier quadruple diode 12 February 2019 Product data sheet 1.
General description Schottky barrier quadruple diode with an integrated guard ring for stress protection.
Two electrically isolated dual Schottky barrier diodes series, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 3.
Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Per diode VR reverse voltage IF forward current VF forward voltage [1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.
02 Conditions IF = 10 mA Min Typ Max Unit - - 30 V - - 200 mA [1] - - 400 mV Nexperia 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 A1 anode 1 2 K2 cathode 2 3 A3 / K4 anode3 / cathode4 4 A4 anode4 5 K3 cathode3 6 K1 / A2 cathode1 / anode2 BAT54XY Schottky barrier quadruple diode Simplified outline 654 Graphic symbol K1; A2 K3 A4 123 TSSOP6 (SOT363) A1 K2 A3; K4 006aaa256 6.
Ordering information Table 3.
Ordering information Type number Package Name BAT54XY TSSOP6 Description plastic, surface-mounted package; 6 leads; 0.
65 mm pitch; 2.
1 mm x 1.
25 mm x 0.
95 mm body Version SOT363 7.
Marking Table 4.
Marking codes Type number BAT54XY [1] % = placeholder for manufacturing site code Marking code[1] %C5 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC60134).
Symbol Parameter Conditions Per diode VR reverse voltage IF forward current IFRM repetitive peak forward tp ≤ 1 s; δ ≤ 0.
5 current IFSM non-repetitive peak forward current tp < 10 ms; Tj(init) = 25 °C Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C Min - - [1] -55 -65 [1] Device mounted on an FR4 Printed-Circuit Board ...


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