Transistor：HVIGBT >
CM1800HCB-34N
HIGH POWER SWITHCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM2400HCB-34N
IC ·························································· 1800 A VCES ···················································· 1700 V 1-element in pack Insulated type CSTBTTM / Soft recovery diode AlSiC baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Publication Date : December 2015
(HVM-1052-C)
1
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT >
CM1800HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
VCES VGES IC ICRM IE IERM Ptot Viso Tj...
CM1800HCB-34N PDF File
