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PFF2N60

N-Channel Super Junction MOSFET

Description

Aug 2006 PFP2N60 / PFF2N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable ...

Wing On

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