Dual N-Channel MOSFET
Description
HYG170ND03LR1S
Dual N-Channel Enhancement Mode MOSFET
Feature
30V/9.5A RDS(ON)= 12.9 mΩ(typ.) @VGS = 10V RDS(ON)= 19.3 mΩ(typ.) @VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
SOP8L
Applications
Switching Application Power Management for DC/DC
Dual N-Channel MOSF...
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