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HYG046N04LQ1D

N-Channel MOSFET

Description

HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Managemen...

HUAYI

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