N-Channel MOSFET
Description
HYG080N03LA1S
N-Channel Enhancement Mode MOSFET
Feature
30V/12A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=10.1mΩ(typ.)@VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
SOP8L
Applications
Power Management for DC/DC Switching Application Battery Protection
Ordering and ...
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