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HYG800P10LR1D

Part Number	HYG800P10LR1D
Manufacturer	HUAYI
Description	P-Channel MOSFET
Published	Apr 22, 2019
Detailed Description	HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-20A RDS(ON)= 77mΩ(typ.) @ VGS = -10V RDS(ON)= 86m...
Datasheet	HYG800P10LR1D PDF File

Overview

HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-20A RDS(ON)= 77mΩ(typ.
) @ VGS = -10V RDS(ON)= 86mΩ(typ.
) @ VGS = -4.
5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.
 Load switching.
Ordering and Marking Information D G800P10 XYMXXXXXX U G800P10 XYMXXXXXX V G800P10 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX P-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully complia...

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