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HYG800P10LR1U

HUAYI

P-Channel MOSFET


Description
HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-20A RDS(ON)= 77mΩ(typ.) @ VGS = -10V RDS(ON)= 86mΩ(typ.) @ VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.  Load switc...



HUAYI

HYG800P10LR1U

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