P-Channel MOSFET
Description
HYG110P04LQ1 D/U/V
P-Channel Enhancement Mode MOSFET
Feature
-40V/-50A RDS(ON)= 9.1mΩ(typ.)@VGS = -10V RDS(ON)= 12mΩ(typ.)@VGS = -4.5V
100% avalanche tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
GDS
GDS
GDS
TO-252-2L TO-251-3L
TO-251-3S
Applications
Switching application Power Manag...
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