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HP50N06

SEMIHOW
Part Number HP50N06
Manufacturer SEMIHOW
Description 60V N-Channel MOSFET
Published Apr 23, 2019
Detailed Description HP50N06 July 2005 HP50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 23 mΩ ID = 50 A FEATURES ‰ Originative New Des...
Datasheet PDF File HP50N06 PDF File

HP50N06
HP50N06

Overview
HP50N06 July 2005 HP50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 23 mΩ ID = 50 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
023 Ω (Typ.
) @VGS=10V ‰ 100% Avalanche Tested TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) ...


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