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H2305N

P-Channel Enhancement-Mode MOSFET

Description

HI-SINCERITY MICROELECTRONICS CORP. H2305N P-Channel Enhancement-Mode MOSFET (-20V, -4.5A) Features RDS(on)<58mΩ@VGS=-4.5V, ID=-4.2A RDS(on)<71mΩ@VGS=-2.5V, ID=-2A Simple Drive Requirement Small Package Outline ISurface Mount Device Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 1/5 H2305N Pin Assignment & Symb...

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H2305N P-Channel Enhancement-Mode MOSFET - HI-SINCERITY

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