Dual N-Channel Enhancement-Mode MOSFET
Description
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : Page No. : 1/4
H8205A
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive...
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