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IS35MW04G084

ISSI
Part Number IS35MW04G084
Manufacturer ISSI
Description 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
Published May 1, 2019
Detailed Description IS34MW04G084/164 IS35MW04G084/164 4Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G084/...
Datasheet PDF File IS35MW04G084 PDF File

IS35MW04G084
IS35MW04G084

Overview
IS34MW04G084/164 IS35MW04G084/164 4Gb SLC-4b ECC 1.
8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G084/164 4Gb(x8/x16) 1.
8V NAND FLASH MEMORY with 4b ECC FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (256M + 8M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte  Highest performance - Read Performance - Random Read: 25us (Max.
) - Serial Access: 45ns (Max.
) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp.
Ranges - Single 1.
8V (1.
7V to 1.
95V) Voltage Supply - 15 mA Active Read Current - 10 µA Standby Current - T emp Grades: - Industrial: -40°C to +85°C - Extended: -40°C to +105°C (1) - Automotive...


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