Thermally-Enhanced High Power RF LDMOS FET
Description
PTFC210202FC
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz
Description
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170
t MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS c process, this device provides excellent thermal per...
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