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CGHV1J070D

Cree
Part Number CGHV1J070D
Manufacturer Cree
Description GaN HEMT Die
Published May 1, 2019
Detailed Description CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility...
Datasheet PDF File CGHV1J070D PDF File

CGHV1J070D
CGHV1J070D

Overview
CGHV1J070D 70 W, 18.
0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.
25 μm gate length fabrication process.
This GaN-on-SiC product offers superior high frequency, high efficiency features.
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J070D FEATURES • 17 dB Typ.
Small Signal Gain at 10 GHz • 60% Typ.
PAE at 10 GHz • 70 W Typical Psat • 40 V Operation • Up to 18GHz Operation APPLICATIONS • Satellite Communications • PTP Communications Links • Marine Radar • Pleasure Craft Radar • Port Vessel Traffic Services • Broadband Amplifiers • High Efficiency Amplifiers Packaging Information • Bare die are shipped in Gel-Pak® containers or on tape.
• Non-adhesive tacky membrane immobilizes die during shipment.
Rev 1.
0 – May 2017 Subject to change without noti...


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