Thermally-Enhanced High Power RF LDMOS FET
Description
PXAC200902FC
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz
Description
The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric deisgn intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual path design, input and output matching, high gain and a therma...
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