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GB20SLT12-247

GeneSiC
Part Number GB20SLT12-247
Manufacturer GeneSiC
Description Silicon Carbide Schottky Diode
Published May 6, 2019
Detailed Description GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capabili...
Datasheet PDF File GB20SLT12-247 PDF File

GB20SLT12-247
GB20SLT12-247

Overview
GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds VRRM IF (Tc = 135°C) QC Package Case Case K A K TO-247-2 A = 1200 V = 32 A = 47 nC Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device...


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