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GB02SHT01-46

GeneSiC
Part Number GB02SHT01-46
Manufacturer GeneSiC
Description High Temperature Silicon Carbide Power Schottky Diode
Published May 6, 2019
Detailed Description   High Temperature Silicon Carbide Power Schottky Diode Features  100 V Schottky rectifier  210 °C maximum operating t...
Datasheet PDF File GB02SHT01-46 PDF File

GB02SHT01-46
GB02SHT01-46

Overview
  High Temperature Silicon Carbide Power Schottky Diode Features  100 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant GB02SHT01-46  VRRM IF (Tc=25°C) QC = 100 V = 4A = 9 nC 2 1 TO – 46 Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Industry’s lowest reverse recovery charge  I...


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