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GA50SICP12-227
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Description
Silicon Carbide Junction
Transistor
/
Schottky
Diode Co-pack Features 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Integrated SiC
Schottky
Rectifier Positive temperature coefficient for easy paralleling Low intrinsic device capacitance Low gate charge Package RoHS Compliant S D...
GeneSiC
Download GA50SICP12-227 Datasheet
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GA50SICP12-227
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
- GeneSiC
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