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GC2X100MPS06-227

GeneSiC
Part Number GC2X100MPS06-227
Manufacturer GeneSiC
Description Silicon Carbide Schottky Diode
Published May 6, 2019
Detailed Description GC2X100MPS06-227 650V 200A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capab...
Datasheet PDF File GC2X100MPS06-227 PDF File

GC2X100MPS06-227
GC2X100MPS06-227

Overview
GC2X100MPS06-227 650V 200A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • 3000 V Isolation for Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speed Package 3 VRRM IF (Tc = 100°C) QC 4 = 650 V = 272 A * = 320 nC * 2 1 SOT-227 (Isolated Base) Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Revers...


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