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FCU360N65S3R0

ON Semiconductor
Part Number FCU360N65S3R0
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published May 9, 2019
Detailed Description FCU360N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is...
Datasheet PDF File FCU360N65S3R0 PDF File

FCU360N65S3R0
FCU360N65S3R0

Overview
FCU360N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for various power systems for miniaturization and higher efficiency.
Features • 700 V @ TJ = 150°C • Typ.
RDS(on) = 310 mW • Ultra Low Gate Charge (Typ.
Qg = 18 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 173 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Computing / Display Power Supplies • Telecom / Server Power Supplies • Industrial Power Supplies • Lighting / Charger / Adapter www.
onsemi.
com VDSS 650 V RDS(ON) MAX 360 mW @ 10 V ID MAX 10 A D G S N-Channel MOSFET GDS I−PAK CASE 369AP MARKING DIAGRAM $Y&Z&3&K FCU360 N65S3R0 © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev.
3 $Y &Z &3 &K FCU360N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FCU360N65S3R0/D FCU360N65S3R0 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage DC AC (f > 1 Hz) 650 V ±30 V ±30 V ID Drain Current Continuous (TC = 25°C) 10 Continuous (TC = 100°C) 6 IDM Drain Current Pulsed (Note 1) 25 EAS Single Pulsed Avalanche Energy (Note 2) 40 IAS Avalanche Current (Note 1) 2.
1 EAR Repetitive Avalanche Energy (Note 1) 0.
83 dv/dt MOSFET dv/dt 100 A A mJ A mJ V/ns Peak Diode Recovery dv/dt (Note 3) 20 ...


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