Power GaAs MESFET
Description
Ka Band Power GaAs MESFET Chip
AFM08P2-000 Features
s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding
Chip thickness = 0.1 mm.
Drain
0.110 mm
0.395 mm
s High Associated Gain, 8.5 dB @ 18 GHz
Gate 0.327 mm 0.655 mm
0.110 ...
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