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EPC2112

EPC
Part Number EPC2112
Manufacturer EPC
Description Integrated Gate Driver eGaN
Published May 27, 2019
Detailed Description EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN® IC Preliminary Datasheet FEATURES: • Integrated Gate Driver – Low Pr...
Datasheet PDF File EPC2112 PDF File

EPC2112
EPC2112

Overview
EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN® IC Preliminary Datasheet FEATURES: • Integrated Gate Driver – Low Propagation Delay – Up to 7 MHz Operation – Operates from 5 V Supply • 200 V, 40-mΩ eGaN FET • Low Inductance 2.
9 mm x 1.
1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.
9 mm x 1.
1 mm APPLICATIONS: • Wireless Power (Highly Resonant and Inductive) • High Frequency DC-DC Conversion Schematic Diagram DESCRIPTION The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.
9 mm by 1.
1 mm surfacemount BGA.
The EPC2...


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