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FFSP10120A

ON Semiconductor
Part Number FFSP10120A
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published May 28, 2019
Detailed Description FFSP10120A — Silicon Carbide Schottky Diode FFSP10120A Silicon Carbide Schottky Diode 1200 V, 10 A Features • Max Junct...
Datasheet PDF File FFSP10120A PDF File

FFSP10120A
FFSP10120A

Overview
FFSP10120A — Silicon Carbide Schottky Diode FFSP10120A Silicon Carbide Schottky Diode 1200 V, 10 A Features • Max Junction Temperature 175 °C • Avalanche Rated 100 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits November 2016 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
1 2 TO-220-2L 1.
Cathode 2.
Anode 1.
Cathode 2.
Anode Absolute Maximum Ratings...


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