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GS8160E36DGT

GSI Technology
Part Number GS8160E36DGT
Manufacturer GSI Technology
Description 18Mb Sync Burst SRAMs
Published May 29, 2019
Detailed Description GS8160E18/32/36DGT-400/375/333/250/200/150 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 ...
Datasheet PDF File GS8160E36DGT PDF File

GS8160E36DGT
GS8160E36DGT

Overview
GS8160E18/32/36DGT-400/375/333/250/200/150 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 400 MHz–150 MHz 2.
5 V or 3.
3 V VDD 2.
5 V or 3.
3 V I/O Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • 2.
5 V or 3.
3 V +10%/–10% core power supply • 2.
5 V or 3.
3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • RoHS-compliant 100-lead TQFP package available Functional Description Applications The GS8160E18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs,...


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