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STGB25N40LZAG

STMicroelectronics
Part Number STGB25N40LZAG
Manufacturer STMicroelectronics
Description Automotive-grade 400V internally clamped IGBT
Published Jun 1, 2019
Detailed Description STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ TAB TAB 2 3 1 D2PA...
Datasheet PDF File STGB25N40LZAG PDF File

STGB25N40LZAG
STGB25N40LZAG

Overview
STGB25N40LZAG, STGD25N40LZAG Datasheet Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ TAB TAB 2 3 1 D2PAK 23 1 DPAK C (2 or TAB) G (1) RG RGE E (3) IGBTG1C2TABE3ESD Product status STGB25N40LZAG STGD25N40LZAG Features • AEC-Q101 qualified • SCIS energy of 320 mJ @ TJ = 25 °C • Parts are 100% tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor Applications • Automotive ignition coil driver circuit Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems.
These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range.
Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
Product summary Order code STGB25N40LZAG Marking GB25N40LZ Package D²PAK Packing Tape and reel Order code STGD25N40LZAG Marking GD25N40LZ Package DPAK Packing Tape and reel DS12284 - Rev 4 - February 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STGB25N40LZAG, STGD25N40LZAG Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) VCES(clamped) V VECS Emitter-collector voltage (VGE = 0 V) 20 V Continuous collector current at TC = 25 °C, VGE = 4 V IC Continuous collector current at TC = 100 °C, VGE = 4 V 25 A 25 A ICP (1) Pulsed collector current 50 A VGE PTOT Gate-emitter voltage Total dissipation at TC = 25 °C VGE(clamped) V 150 W ESCIS_25 (2) Self clamping inductive switching energy 320 mJ ESCIS_150 (3) ESD Self clamping inductive switching energy @ TJ = 150 °C Human body model, R = 1.
5 kΩ, C = 1...


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