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V1P6

Part Number	V1P6
Manufacturer	Vishay
Description	Surface Mount Trench MOS Barrier Schottky Rectifier
Published	Jun 4, 2019
Detailed Description	www.vishay.com V1P6 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Seri...
Datasheet	V1P6 PDF File

Overview

www.
vishay.
com V1P6 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 1.
0 A 60 V 25 A VF at IF = 1.
0 A (125 °C) 0.
45 V TJ max.
Package 150 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.
65 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualifi...

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