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NVD5C632NL

Part Number	NVD5C632NL
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Jun 20, 2019
Detailed Description	NVD5C632NL Power MOSFET 60 V, 2.5 mW, 155 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Lo...
Datasheet	NVD5C632NL PDF File

Overview

NVD5C632NL Power MOSFET 60 V, 2.
5 mW, 155 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain Current RqJA (Notes 1, 2 & 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C Steady TA = 100°C State TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 60 "20 155 110 115 58 29 21 4 2 900 −55 to 175 V V A W A W A °C Source Current (Body Diode) IS 96 A Single Pulse Drain−to−Source Avalanche Energy (T...

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