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SSM3J35AFS

Toshiba
Part Number SSM3J35AFS
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Jun 22, 2019
Detailed Description MOSFETs Silicon P-Channel MOS SSM3J35AFS 1. Applications • Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-sou...
Datasheet PDF File SSM3J35AFS PDF File

SSM3J35AFS
SSM3J35AFS

Overview
MOSFETs Silicon P-Channel MOS SSM3J35AFS 1.
Applications • Analog Switches 2.
Features (1) 1.
2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.
2 Ω (typ.
) (@VGS = -1.
2 V) RDS(ON) = 2.
3 Ω (typ.
) (@VGS = -1.
5 V) RDS(ON) = 2.
0 Ω (typ.
) (@VGS = -1.
8 V) RDS(ON) = 1.
5 Ω (typ.
) (@VGS = -2.
5 V) RDS(ON) = 1.
1 Ω (typ.
) (@VGS = -4.
5 V) 3.
Packaging and Internal Circuit SSM SSM3J35AFS 1: Gate 2: Source 3: Drain ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-03 2021-02-01 Rev.
3.
0 SSM3J35AFS 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source vol...


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