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SSM3J56ACT

Toshiba
Part Number SSM3J56ACT
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Jun 22, 2019
Detailed Description MOSFETs Silicon P-Channel MOS SSM3J56ACT 1. Applications • High-Speed Switching 2. Features (1) 1.2 V drive (2) Low drai...
Datasheet PDF File SSM3J56ACT PDF File

SSM3J56ACT
SSM3J56ACT

Overview
MOSFETs Silicon P-Channel MOS SSM3J56ACT 1.
Applications • High-Speed Switching 2.
Features (1) 1.
2 V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.
5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.
2 V) 3.
Packaging and Pin Assignment CST3 SSM3J56ACT 1: Gate 2: Source 3: Drain ©2015-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-11 2022-11-25 Rev.
3.
0 SSM3J56ACT 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-sourc...


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