DatasheetsPDF.com

CM200DY-13T

IGBT Modules

Description

CM200DY-13T HIGH POWER SWITCHING USE INSULATED TYPE dual switch (half-bridge) Collector current IC .............…..................… 2 0 0 A Collector-emitter voltage VCES .................. 6 5 0 V Maximum junction temperature T v j m a x ......... 1 7 5 °C ●dual switch (half-bridge) ●Copper base plate (Nickel-plating) ●Nickel-plating tab te...

Mitsubishi

Download CM200DY-13T Datasheet

Similar Datasheet

CM200DY-12H IGBT Module - Mitsubishi Electric Semiconductor
CM200DY-12H Dual IGBT Module - Powerex Power Semiconductors
CM200DY-12NF IGBT Module - Mitsubishi Electric Semiconductor
CM200DY-13T IGBT Modules - Mitsubishi

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)