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BAT46GW

nexperia
Part Number BAT46GW
Manufacturer nexperia
Description 250mA Schottky barrier diode
Published Jun 30, 2019
Detailed Description BAT46GW 100 V, 250 mA Schottky barrier diode 24 November 2016 Product data sheet 1. General description Planar Schottk...
Datasheet PDF File BAT46GW PDF File

BAT46GW
BAT46GW

Overview
BAT46GW 100 V, 250 mA Schottky barrier diode 24 November 2016 Product data sheet 1.
General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • Low forward voltage: VF ≤ 850 mV • Low leakage current: IR ≤ 4 µA • Reverse voltage VR ≤ 100 V • Low capacitance • Small SMD plastic package • AEC-Q101 qualified 3.
Applications • High-speed switching • Line termination • Voltage clamping • Reverse polarity protection 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VR reverse voltage VF forward voltage IR reverse current Conditions Tj = 25 °C IF = 250 mA; tp ≤ 300 µs; δ ≤ 0.
02 ; Tj = 25 °C VR = 75 V; pulsed; Tj = 25 °C Min Typ Max Unit - - 100 V - 710 850 mV - 1 4 µA Nexperia BAT46GW 100 V, 250 mA Schottky barrier diode 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode [1] The marking bar indicates the cathode.
Simplified outline 12 SOD123 Graphic symbol 1 2 sym001 6.
Ordering information Table 3.
Ordering information Type number Package Name BAT46GW SOD123 Description Plastic surface-mounted package; 2 leads Version SOD123 7.
Marking Table 4.
Marking codes Type number BAT46GW Marking code G8 BAT46GW Product data sheet All information provided in this document is subject to legal disclaimers.
24 November 2016 © Nexperia B.
V.
2017.
All rights reserved 2 / 13 Nexperia BAT46GW 100 V, 250 mA Schottky barrier diode 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VR reverse voltage Tj = 25 °C IF forward current IFSM non-repetitive peak tp < 10 ms; Tj(init) = 25 °C; square wave forward current Ptot total power dissipation Tamb ≤ 25 °C [1] [2] Tj Tamb Tstg junction temperature ambient temperature storage temperature [1] Dev...


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