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PBSS4130PANP

nexperia
Part Number PBSS4130PANP
Manufacturer nexperia
Description 1A NPN/PNP low VCEsat (BISS) transistor
Published Jul 5, 2019
Detailed Description PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General descripti...
Datasheet PDF File PBSS4130PANP PDF File

PBSS4130PANP
PBSS4130PANP


Overview
PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1.
General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4130PAN.
PNP/PNP complement: PBSS5130PAP.
2.
Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • AEC-Q101 qualified 3.
Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.
g.
motors, fans) 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage open base IC collector current ICM peak col...



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