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PBSS5230PAP

nexperia
Part Number PBSS5230PAP
Manufacturer nexperia
Description 2A PNP/PNP low VCEsat (BISS) transistor
Published Jul 5, 2019
Detailed Description PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1. General description...
Datasheet PDF File PBSS5230PAP PDF File

PBSS5230PAP
PBSS5230PAP

Overview
PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1.
General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP.
NPN/NPN complement: PBSS4230PAN.
2.
Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified 3.
Applications • Load switch • Battery-driven devices...


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