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WNB111S5APTS

Part Number	WNB111S5APTS
Manufacturer	WeEn
Description	Ultrafast power diode
Published	Jul 18, 2019
Detailed Description	WNB111S5APTS Ultrafast power diode - Bare die Rev.01 - 9 October 2018 1. General description Ultrafast power diode (Bar...
Datasheet	WNB111S5APTS PDF File

Overview

WNB111S5APTS Ultrafast power diode - Bare die Rev.
01 - 9 October 2018 1.
General description Ultrafast power diode (Bare die after sawn).
2.
Features and benefits • Fast reverse recovery • Low leakage current • Low forward voltage drop • Bare die 3.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VRRM* repetitive peak reverse voltage IF(AV)** average forward current δ = 0.
5; square-wave pulse Static characteristics VF** forward voltage Dynamic characteristics trr** reverse recovery time IF = 15 A; Tj = 25 °C IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C 4.
Ordering information Table 2.
Ordering information Type number Package Name Description WNB111S5APTS Wafer Bare die on wafer Product data sheet Min Typ Max Unit - - 600 V - - 15 A - 1.
4 1.
8 V - 28 60 ns Version Die WeEn Semiconductors WNB111S5APTS Ultrafast power diode - Bare die 5.
Limiting values Table 3.
Limiting values In accordance with the Absolute Maximum Rating Sy...

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