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WNSC201200W

WeEn
Part Number WNSC201200W
Manufacturer WeEn
Description Silicon Carbide Diode
Published Jul 18, 2019
Detailed Description WNSC201200W Silicon Carbide Diode Rev.03 - 12 November 2020 Product data sheet 1. General description Silicon Carbide ...
Datasheet PDF File WNSC201200W PDF File

WNSC201200W
WNSC201200W

Overview
WNSC201200W Silicon Carbide Diode Rev.
03 - 12 November 2020 Product data sheet 1.
General description Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies.
h RoHS alogen-Free 2.
Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • High junction operating temperature capability (Tj(max) = 175 °C) 3.
Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC S...


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