Power MOSFET
Description
Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
IRFI3205PbF
HEXFET® Power MOSFET
VDSS
55V
RDS(on)
0.008
ID 64A
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t...
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