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BAT54VV

nexperia
Part Number BAT54VV
Manufacturer nexperia
Description Schottky barrier triple diode
Published Jul 26, 2019
Detailed Description BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. ...
Datasheet PDF File BAT54VV PDF File

BAT54VV
BAT54VV

Overview
BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev.
02 — 15 January 2010 Product data sheet 1.
Product profile 1.
1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection.
Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small SMD plastic package.
1.
2 Features „ Low forward voltage „ Ultra small SMD plastic package „ Low capacitance „ Flat leads: excellent coplanarity and improved thermal behavior 1.
3 Applications „ Ultra high-speed switching „ Voltage clamping „ Line termination „ Inverse-polarity protection 1.
4 Quick reference data Table 1.
Symbol VR IF Quick reference data Parameter Conditions continuous reverse voltage continuous forward current Min Typ Max Unit - - 30 V - - 200 mA 2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning Description anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) cathode (diode 2) cathode (diode 1) Simplified outline Symbol 65 4 654 123 SOT666 123 sym046 Nexperia BAT54VV Schottky barrier triple diode in ultra small SOT666 package 3.
Ordering information Table 3.
Ordering information Type number Package Name Description BAT54VV - plastic surface mounted package; 6 leads Version SOT666 4.
Marking Table 4.
Marking codes Type number BAT54VV Marking code C6 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Per diode VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward tp ≤ 1 s; δ ≤ 0.
5 current - IFSM non-repetitive peak forward tp < 10 ms current - Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C [1][2] −65 −65 Max Unit 30 V 200 mA 300 mA 600 mA 170 125 +125 +150 mW °C °C °C [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated a...


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