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CUHS20S30

Toshiba

Schottky Barrier Diode


Description
Schottky Barrier Diode Silicon Epitaxial CUHS20S30 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CUHS20S30 1: Cathode 2: Anode US2H 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Average rectified current IO (Note 1) 2 A Non-r...



Toshiba

CUHS20S30

PDF File CUHS20S30 PDF File


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