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22DN20N

Infineon
Part Number 22DN20N
Manufacturer Infineon
Description Power Transistor
Published Aug 2, 2019
Detailed Description Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate ch...
Datasheet PDF File 22DN20N PDF File

22DN20N
22DN20N

Overview
Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSZ22DN20NS3 G Product Summary VDS RDS(on),max ID 200 V 225 mW 7A PG-TSDSON-8 Type BSZ22DN20NS3 G Package Marking PG-TSDSON-8 22DN20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C Pulsed drain current2) Avalanche energy, single pulse I D,pulse E AS T C=100 °C T C=25 °C I D=3.
5 A, R GS=25 W Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 Value 7.
0 4.
9 28 30 10 ±20 34 -55 .
.
.
150 55/150/56 ...


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