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Q1NK80ZR

Part Number	Q1NK80ZR
Manufacturer	STMicroelectronics
Description	N-CHANNEL MOSFET
Published	Aug 7, 2019
Detailed Description	STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected...
Datasheet	Q1NK80ZR PDF File

Overview

STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET Table 1: General Features TYPE VDSS RDS(on) ID Pw STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V 800 V 800 V 800 V < 16 Ω < 16 Ω < 16 Ω < 16 Ω 0.
3 A 0.
25A 1.
0 A 1.
0 A 3W 2.
5 W 45 W 45 W ■ TYPICAL RDS(on) = 13Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ ESD IMPROVED CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Figure 1: Package TO-92 (Ammopack) 2 3 2 1 SOT-223 3 1 DPAK 3 2 1 IPAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ AC ADAPTORS AND BATTERY CHARGERS ■ SWITH MODE POWER SUPPLIES (SMPS) Table 2: Order Codes SALES TYPE STQ1NK80ZR-AP STN1NK80Z STD1NK80ZT4 STD1NK80Z-1 MARKING Q1NK80ZR N1NK80Z D1NK80Z D1NK80Z January 2006 PACKAGE TO-92 SOT-223 DPAK IPAK PACKAGING AMMOPAK TAPE & REEL TAPE & REEL TUBE Rev.
3 1/15 STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Table 3: Absolute Maximum ratings Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.
5KΩ) dv/dt (1) Peak Diode Recovery voltage slope Tj Operating Junction Temperature Tstg Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 640 Table 4: Thermal Data Rthj-case Thermal R...

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