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CDBJFSC3650-G

Part Number	CDBJFSC3650-G
Manufacturer	Comchip
Description	Silicon Carbide Power Schottky Diode
Published	Aug 13, 2019
Detailed Description	Silicon Carbide Power Schottky Diode CDBJFSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device Features - R...
Datasheet	CDBJFSC3650-G PDF File

Overview

Silicon Carbide Power Schottky Diode CDBJFSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device Features - Rated to 650V at 3 Amps - Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram K(3) K(1) A(2) TO-220F 0.
404(10.
25) 0.
388( 9.
85) 0.
130(3.
30) 0.
118(3.
00) 0.
112(2.
85) 0.
100(2.
55) 0.
264(6.
70) 0.
248(6.
30) 0.
039(1.
00) 0.
024(0.
60) 0.
055(1.
40) 0.
043(1.
10) 0.
031(0.
80) 0.
020(0.
50) 0.
602(15.
30) 0.
587(14.
90) 0.
154(3.
90) 0.
130(3.
30) 0.
539(13.
70) 0.
516(13.
10) 0.
201(5.
10) 0.
100(2.
55) 0.
126(3.
20) 0.
118(3.
00) 0.
185(4.
70) 0.
173(4.
40) 0.
110(2.
80) 0.
098(2.
50) 0.
031(0.
80) 0.
020(0.
50) Dimensions in inches and (millimeter) Maximum Rating (at TA=25°C unless otherwise noted) Parameter Repetitive peak reverse voltage Surge peak reverse voltage DC blocking voltage Typical continuous forward current Repetitive peak forwar...

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CDBJFSC3650-G Silicon Carbide Power Schottky Diode - Comchip

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