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CDBJSC5650-G

Part Number	CDBJSC5650-G
Manufacturer	Comchip
Description	Silicon Carbide Power Schottky Diode
Published	Aug 13, 2019
Detailed Description	Silicon Carbide Power Schottky Diode CDBJSC5650-G Reverse Voltage: 650 V Forward Current: 5 A RoHS Device Features - Ra...
Datasheet	CDBJSC5650-G PDF File

Overview

Silicon Carbide Power Schottky Diode CDBJSC5650-G Reverse Voltage: 650 V Forward Current: 5 A RoHS Device Features - Rated to 650V at 5 Amps - Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram K(3) K(1) A(2) TO-220-2 0.
116(2.
95) 0.
104(2.
65) 0.
409(10.
40) 0.
394(10.
00) 0.
311(7.
90) 0.
303(7.
70) 0.
152(3.
85) 0.
148(3.
75) 0.
646(16.
40) Max.
0.
620(15.
75) 0.
600(15.
25) 0.
181(4.
60) 0.
173(4.
40) 0.
052(1.
32) 0.
048(1.
23) 0.
260(6.
60) 0.
244(6.
20) 0.
067(1.
70) 0.
045(1.
14) 0.
155(3.
93) 0.
138(3.
50) 0.
551(14.
00) 0.
512(13.
00) 0.
107(2.
72) 0.
094(2.
40) 0.
035(0.
88) 0.
024(0.
61) 0.
203(5.
15) 0.
195(4.
95) 0.
028(0.
70) 0.
019(0.
49) Dimensions in inches and (millimeter) Maximum Rating (at TA=25°C unless otherwise noted) Parameter Repetitive peak reverse voltage Surge peak reverse voltage DC blocking voltage Typical continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Power dissipation Typical thermal resistance Operating junction temperature range Storage temperature range Conditions Tc = 160°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.
3 Tc = 25°C, tp = 10ms Half sine wave TC = 25°C TC = 110°C Junction to case Symbol VRRM VRSM VDC IF IFRM IFSM PTOT RθJC TJ TSTG Value 650 650 650 5 30 60 85.
8 37.
2 1.
748 -55 ~ +175 -55 ~ +175 Unit V V V A A A W °C/W °C °C Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC04 Comchip Technology CO.
, LTD.
REV:A Page 1 Silicon Carbide Power Schottky Diode Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Forward voltage IF = 5 A , TJ = 25°C IF = 5 A , TJ = 175°C Reverse current VR = 650V , TJ = 25°C VR = 650V , TJ = 175°C Total capacitive charge VR = 400V , TJ = 150°C QC = ∫VR C(V) dv 0 VR = 0V , TJ = 25°C , f = 1 MHZ Total capacitance...

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CDBJSC5650-G Silicon Carbide Power Schottky Diode - Comchip

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