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KSE44H1

Fairchild Semiconductor
Part Number KSE44H1
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Aug 24, 2019
Detailed Description KSE44H Series KSE44H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage : ...
Datasheet PDF File KSE44H1 PDF File

KSE44H1
KSE44H1

Overview
KSE44H Series KSE44H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.
) @ 8A • Fast Switching Speeds • Complement to KSE45H 1 TO-220 1.
Base 2.
Collector 3.
Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCEO Collector-Emitter Voltage : KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11 VEBO IC ICP PC PC TJ TSTG Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 30 45 60 80 5 10 20 50 1.
67 150 - 55 ~ 150 Units V V V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition ICES IEBO hFE Collector Cut-off Current Emitter Cut-off Current *DC Current Gain : KSE44H 1,4,7,10 : KSE44H 2,5,8,11 VCE = Rated VCEO, VEB = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 2A VCE(sat) *Collector-Emitter Saturation Voltage : KSE44H 1, 4, 7 10 : KSE44H 2, 5, 8,11 VBE (sat) *Base-Emitter Saturation Voltage fT Current Gain Bandwidth Product Cob Output Capacitance tON Turn ON Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% IC = 8A, IB = 0.
8A IC = 8A, IB = 0.
4A IC = 8A, IB = 0.
8A VCE = 10V, IC = 0.
5A VCB = 10V, f = 1MHz VCC =20V, IC = 5A IB1 = - IB2 = 0.
5A Min.
35 60 Typ.
50 130 300 500 140 Max.
10 100 Units µA µA 1V 1V 1.
5 V MHz pF ns ns ns ©2001 Fairchild Semiconductor Corporation Rev.
A1, June 2001 Typical Characteristics hFE, DC CURRENT GAIN 1000 100 V = 1V CE 10 1 0.
01 0.
1 1 IC[A], COLLECTOR CURRENT Figure 1.
DC current Gain 10 1000 f=100MHZ 100 Cob[pF], CAPACITANCE PC[W], POWER DISSIPATION 10 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3.
Collector Output Capacitance 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Tc[oC], CASE TEMPERATURE Figure 5.
Power Derating ©2001 Fairchild Semiconductor Corporatio...


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