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LFUSCD20120B

Littelfuse
Part Number LFUSCD20120B
Manufacturer Littelfuse
Description SiC Schottky Diode
Published Sep 5, 2019
Detailed Description SiC Schottky Diode LFUSCD20120B, 1200 V, 20 A, TO-247 3-lead LFUSCD20120B RoHS Pb Description The LFUSCD series of si...
Datasheet PDF File LFUSCD20120B PDF File

LFUSCD20120B
LFUSCD20120B

Overview
SiC Schottky Diode LFUSCD20120B, 1200 V, 20 A, TO-247 3-lead LFUSCD20120B RoHS Pb Description The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Features • Positive temperature coefficient for safe operation and ease of paralleling • 175 °C maximum operating junction temperature • Enhanced surge capability • Extremely fast, temperature-independent switching behavior • Dramatically reduced switching losses compared to Si bipolar diodes Circuit Diagram Case 4 12 3 4 Applications • Boost diodes in power factor correction • Switch-mode power supplies • Uninterruptible power supplies • Solar inverters • Industrial motor drives Maximum Ratings Characteristics DC Blocking Voltage Repetitive Peak Reverse Voltage, Tj = 25 °C Maximum DC Forward Current Non-Repetitive Forward Surge Current Power Dissipation Maximum Operating Junction Temperature Storage Temperature Soldering Temperatures, Wavesoldering Only Allowed at Leads 1 23 Symbol VR VRRM IF IFSM PTot TJ,MAX TSTG Tsold Conditions - TC = 142°C TC = 25 °C, 8.
3 ms, half sine pulse TC = 25 °C TC = 142 °C 1.
6 mm from case for 10s Max.
(Leg / Device) 1200 1200 10 / 20 80 / 160 136 / 272 30 / 60 175 -55 to 175 260 Unit V V A A W °C °C °C © 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/05/16 SiC Schottky Diode LFUSCD20120B, 120 V, 20 A, TO-247 3-lead Electrical Characteristics Characteristics Symbol Conditions Forward Voltage Reverse Current Total Capacitive Charge Total Capacitance VF IR QC C IF = 20 A, TJ = 25 °C IF = 20 A, TJ = 175 °C VR = 1200 V , TJ = 25 °C VR = 1200 V , TJ = 175 °C VR = 600 V, IF = 20 A, di/dt = 250 A/µs VR = 1 V, f =1 MHz VR = 300 V, f = 1 MHz VR = 600 V, f = 1 MHz Footnote: TJ = +25 °C un...


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