N-Channel MOSFET
Description
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL2300
FEATURES
z VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A
Pb
z VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free
z VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A
APPLICATIONS
z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC.
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