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1MBI600NP-060

Fuji Electric
Part Number 1MBI600NP-060
Manufacturer Fuji Electric
Description IGBT
Published Mar 23, 2005
Detailed Description IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FW...
Datasheet PDF File 1MBI600NP-060 PDF File

1MBI600NP-060
1MBI600NP-060

Overview
IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) n Outline Drawing n Applications • High Power Switching • A.
C.
Motor Controls • D.
C.
Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max.
Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.
C.
1min.
Vis Mounting *1 Terminals *2 Terminals *3 Ratings 600 ± 20 600 1200 600 1200 2000 +150 -40 ∼ +125 2500 3.
5 4.
5 1.
7 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.
5 ∼ 3.
5 Nm (M5) or (M6) *2:Recommendable Value; 3.
5 ∼ 4.
5 Nm (M6) *3:Recommendable Value; 1.
3 ∼ 1.
7 Nm (M4) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=600mA VGE=15V IC=600A VGE=0V VCE=10V f=1MHz VCC=300V IC=600A VGE=± 15V RG=2.
7Ω IF=600A VGE=0V IF=600A Min.
Typ.
Max.
4.
0 60 7.
5 2.
8 Units mA µA V V pF 1.
2 0.
6 1.
0 0.
35 3.
0 300 4.
5 39600 8800 4000 0.
6 0.
2 0.
6 0.
2 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min.
Typ.
Max.
0.
063 0.
11 Units °C/W 0.
0125 Collector current vs.
Collector-Emitter voltage T j=25°C 1400 V GE =20V,15V,12V 1200 1200 C Collector current vs.
Collector-Emit...


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