SILICON MIXER DIODE
Description
1N23WE
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
High burnout resistance Low noise figure Hermetically sealed package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG
O O
20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C
O O ...
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