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2N5909

Siliconix
Part Number 2N5909
Manufacturer Siliconix
Description dual n-channel JFET
Published Sep 24, 2019
Detailed Description matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAX...
Datasheet PDF File 2N5909 PDF File

2N5909
2N5909

Overview
matched dual n-channel JFETs designed for • • • • Differential Amplifiers • High Input Impedance Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) Gate-to-Gate Voltage .
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±80V Gate-Drain or Gate-Source Voltage -40 V Gate Current .
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10 mA Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) .
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367mW Total Device Dissipation, T A =25°C (Derate 4 mWrC) .
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500mW Storage Temperature Range .
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-65 to +200°C H Siliconix Performance Curves NT See Section 4 BENEFITS • Matching Characteristics Specified • High Input Impedance IG = 1 pA Max (2N5906-9) TO·78 See Section 6 ~~0, 62 s, 82 Jc S2 0 50 D2 0, '0 06 G2 20 7 0, 10 S, Bottom View ~\°2 [ *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) CharactenstlC 1-2.
I~ I~ 4 S TA :5' ~ '6' C I, IGSS BVGSS VGS'off) VGS IG Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Source...


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