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IMZ120R045M1

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1200V SiC Trench MOSFET


Description
IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous recti...



Infineon

IMZ120R045M1

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